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Freescale Semiconductor Technical Data
Document Number: MMG2401 Rev. 3, 5/2006
Indium Gallium Phosphorus HBT
WLAN Power Amplifier
* 26.5 dBm P1dB @ 2450 MHz * * * * * Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB) High Gain, High Efficiency and High Linearity EVM = 3% Typ @ Pout = +19 dBM, 14% PAE RoHS Compliant In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel. Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz.
MMG2401NR2
2400- 2500 MHz, 27.5 dB, 26.5 dBm 802.11g WLAN POWER AMPLIFIER InGaP HBT
CASE 1483 - 01 QFN 3x3
Table 1. Maximum Ratings
Rating Collector Supply Base Supply First Stage Base Supply Second Stage Detector Bias Supply DC Current Symbol VCC VB1 VB2 VBIAS IDC Value 5 5 5 5 171 Unit V V V V mA
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Operating Temperature Range Storage Temperature Range Symbol RJC TC Tstg Value 185 (1) - 40 to +85 - 55 to +150 Unit C/W C C
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Simulated. Rating 1 Package Peak Temperature 260 Unit C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MMG2401NR2 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted.) VCC = 3.3 Vdc, VBIAS = 3 Vdc, ICQ = 83 mA, f = 2450 MHz
Characteristic Output Power at 1dB Compression Power Gain (Pout = 19 dBm) Error Vector Magnitude (Pout = 19 dBm, 64 QAM/54 Mbps) Total Current (Pout = 19 dBm) Quiescent Current Bias Control Reference Current (ICQ = 66 mA) Gain Flatness (Over 100 MHz) Gain Variation over Temperature ( - 40 to 85C) Input Return Loss Reverse Isolation Second Harmonic (Pout = 19 dBm) Third Harmonic (Pout = 19 dBm) Ramp - On Time (10 - 90%) Symbol P1dB Gp EVM ICtotal IDCQ Iref GF -- IRL -- -- -- tON Min 24 26 -- -- -- -- -- -- -- -- -- -- -- Typ 26.5 27.5 3 210 156 8.4 0.2 1 - 10 - 35 - 45 - 35 100 Max -- 29 -- -- -- -- -- -- - 7.5 -- -- -- -- Unit dBm dB % mA mA mA dB dB dB dB dBc dBc ns
MMG2401NR2 2 RF Device Data Freescale Semiconductor
Table 6. Functional Pin Description
Name VB1 RFIN Pin Number 1 2, 3 Description Base power supply for first stage amplifier. RF input for the power amplifier. This pin is DC - shorted to GND and AC - coupled to the transistor base of the first stage. Detector bias voltage supply. Detector output voltage reference. Vout - VREF is useful for tracking detector performance over temperature. Detector output voltage. Collector power supply for second stage amplifier. RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. Base power supply for second stage amplifier. Not connected. Collector power supply for first stage amplifier. The center metal base of the QFN 3x3 package provides both DC and RF ground as well as heat sink contact for the power amplifier. (Top View) VB1 RFIN RFIN 1 2 3 6 45 VBIAS VREF VOUT VCC1 NC VB2 12 11 10 9 8 7 RFOUT RFOUT VCC2
VBIAS VREF VOUT VCC2 RFOUT VB2 NC VCC1 GND
4 5 6 7 8, 9 10 11 12 Backside Center Metal
Figure 1. Pin Connections
MMG2401NR2 RF Device Data Freescale Semiconductor 3
VB1
VCC1
VB2
VCC2
C11
C1
C2
C3
C4
C5
C12
C10
C9
C8
C7
C6
L1 RF INPUT Z1 Z2 RF OUTPUT
C14
C15
C13
VBIAS
VREF
VOUT
Z1, Z2 PCB
0.10 x 0.5395 Microstrip Getek ML200M, 0.005, r = 3.8
Figure 2. MMG2401NR2 Test Circuit Schematic
Table 7. MMG2401NR2 Test Circuit Component Designations and Values
Part C1, C6 C2, C7 C3, C8 C4, C9, C11, C12 C5, C10, C13, C14, C15 L1 Description 1 F Chip Capacitor 0.1 F Chip Capacitor 0.01 F Chip Capacitor 100 pF Chip Capacitor 20 pF Chip Capacitor 7.5 nH Chip Inductor Part Number 12065A105JAT2A 12065A104JAT2A 12065A103JAT2A 08055A101FAT2A 12065A200CAT2A 0402CS - 7N5XJBC Manufacturer AVX AVX AVX AVX AVX Coilcraft
MMG2401NR2 4 RF Device Data Freescale Semiconductor
C1 C2 C3
C11
C4 C5 VB1 VCC1 C12 VB2
VCC2 VBIAS VREF
VOUT
L1
C14
C15
C13
C10 C9 C8 C7 C6
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 3. MMG2401NR2 Test Circuit Component Layout
MMG2401NR2 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
29 EVM, ERROR VECTOR MAGNITUDE (%) 7 6 5 4 3 2 1 0 25 0 5 10 15 20 25 Pout, OUTPUT POWER (dBm) 85_C -40_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz
Gp, POWER GAIN (dB)
28 TC = 25_C 27 -40_C 85_C 26 25 24 0 5 10 15 Pout, OUTPUT POWER (dBm)
VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 20
TC = 25_C
Figure 4. Power Gain versus Output Power
Figure 5. Error Vector Magnitude versus Output Power
TC = -40_C 20 , EFFICIENCY (%) 25_C 15 85_C 10
Vout , DETECTOR OUTPUT VOLTAGE (V)
25
10
1
TC = 85_C 0.1 25_C -40_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 10 15 20 25
5 0 0 5 10 15 Pout, OUTPUT POWER (dBm)
VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 20 25
0.01 0 5 Pout, OUTPUT POWER (dBm)
Figure 6. Efficiency versus Output Power
Figure 7. Detector Output Voltage versus Output Power
4 3 2 AM to PM (_) 1 0 -1 -2 -3 -4 0 5 10 15 20 25 30 Pout, OUTPUT POWER (dBm) VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz
250
I CC , TOTAL CURRENT (mA)
200 TC = 85_C 25_C -40_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 0 5 10 15 20 25
150
100
50 0
Pout, OUTPUT POWER (dBm)
Figure 8. AM to PM versus Output Power
Figure 9. Total Current versus Output Power
MMG2401NR2 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
35 IRL, INPUT RETURN LOSS (dB) VCC = 3.3 Vdc VB1 = 2.9 Vdc 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8
0
30 G p , POWER GAIN (dB)
-5
25
-10
20
-15
15 10 f, FREQUENCY (GHz)
-20 -25 2 2.1 2.2 2.3 2.4 2.5 f, FREQUENCY (GHz) VCC = 3.3 Vdc VB1 = 2.9 Vdc 2.6 2.7 2.8
Figure 10. Power Gain (S21) versus Frequency
REVERSE TRANSCONDUCTANCE ISOLATION (dB)
Figure 11. Input Return Loss (S11) versus Frequency
-20 ORL, OUTPUT RETURN LOSS (dB)
0
-30
-5
-40
-10
-50
-15
-60 -70 2 2.1 2.2 2.3 2.4 2.5 f, FREQUENCY (GHz) VCC = 3.3 Vdc VB1 = 2.9 Vdc 2.6 2.7 2.8
-20 -25 2 2.1 2.2 2.3 2.4 2.5 f, FREQUENCY (GHz) VCC = 3.3 Vdc VB1 = 2.9 Vdc 2.6 2.7 2.8
Figure 12. Reverse Transconductance Isolation (S12) versus Frequency
Figure 13. Output Return Loss (S22) versus Frequency
MMG2401NR2 RF Device Data Freescale Semiconductor 7
A C
4X D
b1 E E/2 PIN1 ID
N=12
4X D 1 2 3 0.45 B L 0.25 MIN. 0.25 MIN.
SEATING PLANE
1 2 3
2 F/2 F (Ny - 1)e
e (Nx - 1)e 2
TOP VIEW
SIDE VIEW
BOTTOM VIEW
NOTES: 1. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.20 AND 0.25 MM FROM TERMINAL TIP. 2. N IS THE NUMBER OF TERMINALS (12). Nx IS THE NUMBER OF TERMINALS IN X-DIRECTION AND Ny IS THE NUMBER OF TERMINALS IN Y-DIRECTION. 3. ALL DIMENSIONS ARE IN MILLIMETERS.
DIM A B C D E F b e Nx Ny SYMBOLS EXPOSED PAD
MIN
NOM MAX 3.00 BSC 3.00 BSC - 0.85 1.00 0.24 0.42 0.60 SEE EXPOSED PAD SEE EXPOSED PAD 0.18 0.23 0.30 0.50 BSC 3 3 E NOM 1.30 F NOM 1.30
STANDARD DETAIL "A" - PIN #1 ID AND TIE BAR MARK OPTION
MIN 1.15
MAX 1.45
MIN 1.15
MAX 1.45
Figure 14. MMG2401NR2 Specific Mechanical Outline Information
MMG2401NR2 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
3 PIN 1 INDEX AREA A M 2X 0.1 C
3
DETAIL G
B 2X 0.1 C 1.55 1.25
10 12
M
EXPOSED DIE ATTACH PAD
9
DETAIL M PIN 1 INDEX
1
1.55 1.25
3 7
DETAIL N
12X 0.75 0.50 9
6
4
12X 0.30 0.18 0.10
M
8X 0.5
C AB VIEW M - M
NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. THE COMPLETE JEDEC DESIGNATOR FOR THIS PACKAGE IS: HF-PQFP-N. 4. FOR ANVIL SINGULATED QFN PACKAGES, MAXIMUM DRAFT ANGLED IS 12 _ . 5. PACKAGE WARPAGE MAX 0.05 MM. 6. CORNER CHAMFER MAY NOT BE PRESENT. DIMENSIONS OF OPTIONAL FEATURES ARE FOR REFERENCE ONLY. 7. CORNER LEADS CAN BE USED FOR THERMAL OR GROUND AND ARE TIED TO THE DIE ATTACH PAD. THESE LEADS ARE NOT INCLUDED IN THE LEAD COUNT. 8. COPLANARITY APPLIES TO LEAD, CORNER LEADS, AND DIE ATTACH PAD. 9. THIS DIMENSION APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.20 MM AND 0.25 MM FROM TERMINAL TIP.
CASE 1483 - 01 ISSUE A QFN 3x3
Page 1 of 3
MMG2401NR2 RF Device Data Freescale Semiconductor 9
(45_)
0.60 0.24
(0.25)
(0.25) DETAIL N CORNER CONFIGURATION 6
0.60 0.24
DETAIL N PREFERRED CORNER CONFIGURATION 6
0.1 C
1.0 0.8
1.00 0.75
0.05 C
8
0.05 0.00
C DETAIL G VIEW ROTATED 90_ CW
SEATING PLANE
CASE 1483 - 01 ISSUE A QFN 3x3
Page 2 of 3
MMG2401NR2 10 RF Device Data Freescale Semiconductor
0.217 0.137 DETAIL S
(0.25)
0.217 0.137
(0.1)
(0.25) DETAIL M PREFERRED BACKSIDE PIN 1 INDEX DETAIL S BACKSIDE PIN 1 INDEX
7
TIE BAR MARK OPTION PIN 1 ID
4X 0.23 0.13
(45_ ) 4X 0.65 0.30 (0.45) (0.35) R0.2 PIN 1 ID DETAIL M DETAIL M BACKSIDE PIN 1 INDEX OPTION
BACKSIDE PIN 1 INDEX OPTION
CASE 1483 - 01 ISSUE A QFN 3x3
Page 3 of 3
MMG2401NR2 RF Device Data Freescale Semiconductor 11
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MMG2401NR2
Rev. 12 3, 5/2006 Document Number: MMG2401
RF Device Data Freescale Semiconductor

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